The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jul. 24, 2018
Epistar Corporation, Hsinchu, TW;
Hsin-Chih Chiu, Hsinchu, TW;
Shih-I Chen, Hsinchu, TW;
You-Hsien Chang, Hsinchu, TW;
Hao-Min Ku, Hsinchu, TW;
Ching-Yuan Tsai, Hsinchu, TW;
Kuan-Chih Kuo, Hsinchu, TW;
Chih-Hung Hsiao, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.