The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 28, 2018
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventor:
Shingo Totani, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/26 (2010.01); H01L 33/24 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 33/24 (2013.01); H01L 33/26 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01);
Abstract
To remove a deteriorated layer generated in forming a scribing trench by laser irradiation. A scribing trench is formed by irradiating a laser beam along a device dividing line on the rear surface of a substrate. At this time, a deteriorated layer is formed on the bottom surface or side surface of the scribing trench. Next, a protective film is formed so as to cover the entire top surface of the device structure, and the deteriorated layer is removed by wet etching. Wet etching is performed by alternately repeating BHF (buffered hydrofluoric acid) wet etching and MEA (monoethanolamine) wet etching several times.