The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Jul. 28, 2015
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Seunghwan Shim, Seoul, KR;

Ilhyoung Jung, Seoul, KR;

Indo Chung, Seoul, KR;

Eunhye Youn, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/077 (2012.01); H01L 31/028 (2006.01); H01L 31/0368 (2006.01); H01L 31/0352 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/077 (2013.01); H01L 31/028 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/03682 (2013.01); H01L 31/035272 (2013.01); H01L 31/0747 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.


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