The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
May. 30, 2018
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.