The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Mar. 10, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Hui An, Beijing, CN;

Dezhi Xu, Beijing, CN;

Xianxue Duan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/134363 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/06 (2013.01); H01L 29/10 (2013.01); H01L 29/42384 (2013.01); H01L 29/66765 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01); G02F 2001/134318 (2013.01); H01L 29/66969 (2013.01);
Abstract

A thin film transistor and a method for manufacturing the same, an array substrate, and a display device are provided in embodiments of the disclosure. The method for manufacturing a thin film transistor in embodiments of the disclosure forms a plurality of strip-shaped protrusions on a substrate by a patterning process before forming structures of various layers of the thin film transistor, and then forms sequentially a gate electrode, a gate insulating layer, an active layer, a source-drain electrode on the plurality of strip-shaped protrusions; in other words, the thin film transistor is prepared, whose channels are aligned with and shaped to be similar to the plurality of strip-shaped protrusions, in a widthwise direction thereof.


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