The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 30, 2013
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe-shi, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Hiroaki Tao, Kobe, JP;
Kenta Hirose, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe-shi, JP;
Abstract
Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; an oxide semiconductor layer that is used as a channel layer; and a gate insulator film that is arranged between the gate electrode and the channel layer. The oxide semiconductor layer is configured of at least one metal element that is selected from the group consisting of In, Ga, Zn and Sn (excluding the cases where the oxide semiconductor layer is constituted of metal elements Sn, and at least one of In and Zn). The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.