The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
May. 15, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Feng Kang, Beijing, CN;
Nini Bai, Beijing, CN;
Liangliang Liu, Beijing, CN;
Liang Tang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Inner Mongolia, CN;
Abstract
The disclosure discloses a thin film transistor, a method for fabricating the same, and an OLED display panel. The method for fabricating a thin film transistor includes: forming a poly-silicon layer and a gate insulation layer on a base substrate in that order; forming a pattern of a gate above the base substrate with the gate insulation layer in a patterning process; doping the base substrate with the pattern of the gate for the first time; forming a pattern of first photoresist on the base substrate doped for the first time, using a mask for forming the pattern of the gate, wherein the pattern of the first photoresist covers the pattern of the gate and an area for forming a lightly doped drain area; and doping the base substrate with the pattern of the first photoresist for the second time to form a pattern of an active layer.