The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 19, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Masami Hayashi, Kumamoto, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A first oxide semiconductor region serving as a channel region of a TFT is formed on a first insulating region of a gate insulating film whose hydrogen content is comparatively low, and a second oxide semiconductor region that contacts with a source electrode and a drain electrode is formed on a second insulating region of a gate insulating film whose hydrogen content is comparatively high. For this reason, sheet resistance Rof the first oxide semiconductor region is comparatively high, and sheet resistance Rof the second oxide semiconductor region is comparatively low so that R>R
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile