The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 03, 2018
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-su, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/26586 (2013.01); H01L 23/5225 (2013.01); H01L 29/1045 (2013.01); H01L 29/1083 (2013.01); H01L 29/402 (2013.01); H01L 29/4175 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01);
Abstract
A power semiconductor device includes a drain region and a source region disposed on a substrate, a gate insulating layer and a gate electrode disposed on the substrate and disposed between the drain region and the source region, a protection layer in contact with a top surface of the substrate and a top surface of the gate electrode, a source contact plug connected to the source region, a drain contact plug connected to the drain region, and a field plate plug in contact with the protection layer, wherein a width of the field plate plug is greater than a width of the source contact plug or a width of the drain contact plug.