The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Dec. 07, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/06 (2006.01); H01L 23/532 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/53295 (2013.01); H01L 27/0629 (2013.01);
Abstract
Device structures and fabrication methods for an on-chip resistor. A resistor body is formed on an interlayer dielectric layer of a contact level. A contact is formed that extends vertically through the interlayer dielectric layer. One or more dielectric layers are formed over the contact level, and a metal feature is formed in the one or more dielectric layers. The metal feature is at least in part in direct contact with a portion of the resistor body.