The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 22, 2018
Omnivision Technologies, Inc., Santa Clara, CA (US);
Kevin Ka Kei Leung, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light and a global shutter gate transistor coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge. The isolation structure is filled with tungsten and is coupled to receive a variable bias signal to control a bias of the isolation structure. The variable bias signal is set to a first bias value during a transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during a transfer of the image charge from the storage transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile