The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Sep. 12, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Ippei Kume, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 49/02 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 24/17 (2013.01); H01L 28/10 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A semiconductor device includes a first and a second chips. A first inductor is above a first surface or a second surface located on an opposite side to the first surface. A first metal electrode is between the first and second surface to penetrate through the first substrate and to be connected to the first inductor. The second chip includes a second element provided on a third surface of a second substrate. A second inductor provided above a third surface of the second substrate or a fourth surface located on an opposite side to the third surface. A second metal electrode is provided between the third surface and the fourth surface to penetrate through the second substrate and to be connected to the second inductor. The first and second chips are stacked. The first and second inductors are electrically connected via the first or second metal electrode, as one inductor.


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