The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Feb. 18, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ming Hao Tang, Ballston Lake, NY (US);

Yuping Ren, Clifton Park, NY (US);

Rui Chen, Clifton Park, NY (US);

Bradley Morgenfeld, Greenfield Center, NY (US);

Zheng G. Chen, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); G03F 9/00 (2006.01); G03F 7/20 (2006.01); G01N 21/95 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G01N 21/9501 (2013.01); G03F 7/70466 (2013.01); G03F 7/70633 (2013.01); G03F 9/7076 (2013.01); G03F 9/7084 (2013.01); H01L 22/12 (2013.01);
Abstract

This disclosure relates to a structure for aligning layers of an integrated circuit (IC) structure that may include a first dielectric layer positioned above a semiconductor substrate having one or more active devices, a trench stop layer positioned above the first dielectric layer, a second dielectric layer positioned above the trench stop layer, and a plurality of metal-filled marking trenches extending vertically through the second dielectric layer and the trench stop layer and at least partially into the first dielectric layer. The metal-filled trenches are electrically isolated from any active devices contained in the IC.


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