The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Dec. 31, 2018
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Hubei, CN;
Abstract
A method for alleviating an etching defect of a salicide barrier layer is disclosed. The salicide barrier layer includes a first barrier layer, a second barrier layer and a third barrier layer. When the salicide barrier layer is being etched, the third barrier layer is removed during first etching. In this case, the second barrier layer is used as an etch stop layer, and the second barrier layer is removed during second etching. In this case, the first barrier layer is used as an etch stop layer, the first barrier layer is removed during third etching. The salicide barrier layer is divided into three layers, the second barrier layer and the first barrier layer are respectively used as an etch stop layer, so that the third barrier layer and the second barrier layer can be prevented from being over-etched, thereby effectively avoiding defects caused by over-etching and alleviating device performance.