The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jul. 12, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Co., Ltd., Ordos, Inner Mongolia, CN;
Zhendong Tian, Beijing, CN;
Hanrong Liu, Beijing, CN;
Bing Gong, Beijing, CN;
Kaifu Jia, Beijing, CN;
Shuang Hu, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Ordos, Inner Mongolia, CN;
Abstract
A method of manufacturing a thin film transistor includes forming a semiconductor layer on a base substrate; forming a gate electrode on the semiconductor layer; forming a shield on the gate electrode, wherein a perpendicular projection of the shield onto the base substrate covers a first source portion of the source region and a first drain portion of the drain region; and performing ion implantation to the semiconductor layer by using the shield as a mask, so as to form a first doped region in the first source portion and in the first drain portion, and to form a second doped region in a second source portion of the source region that is not covered by the perpendicular projection of the shield and in a second drain portion of the drain region that is not covered by the perpendicular projection of the shield.