The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Mar. 30, 2018
Sumitomo Electric Industries, Ltd., Chuo-ku, Osaka-shi, JP;
Kazuhide Sumiyoshi, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A process of forming a silicon nitride film on a nitride semiconductor layer as a passivation film is disclosed. The process first sets a temperature lower than 500° C. to load into a growth reactor, a wafer that provides the nitride semiconductor layer thereon. Then, the process raises the temperature to a deposition temperature higher than 750° C. while replacing the atmosphere in the reactor with pure ammonia (NH), or a mixed gas of NHand Nwith a NHpartial pressure greater than 0.2, and sets the pressure higher than 3 kPa. Finally, with the pressure lower than 100 Pa and di-chloro-silane (SiHCl) supplied, the SiN is deposited on the nitride semiconductor layer.