The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Oct. 24, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11B 5/39 (2006.01); H01L 29/82 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11B 5/39 (2013.01); G11B 5/3909 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
Magnetic tunnel junction devices are provided. A magnetic tunnel junction device includes a pinned layer. The magnetic tunnel junction device includes a free layer on the pinned layer. The free layer includes a first layer, a second layer that is on the first layer, and a third layer that is between the first layer and the second layer. A Curie temperature of the third layer is lower than a Curie temperature of the first layer and lower than a Curie temperature of the second layer. Moreover, the magnetic tunnel junction device includes an insulating layer that is between the pinned layer and the free layer. Related magnetoresistive memory devices are also provided.