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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10566041 B1

PDFFull Text
Date of Patent:
Feb. 18, 2020

Filed:

Aug. 06, 2018

Magnetic tunnel junction memory device with stress inducing layers

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jong-Koo Lim, Icheon-si, KR;

Ku-Youl Jung, Seoul, KR;

Jae-Hyoung Lee, Icheon-si, KR;

Jeong-Myeong Kim, Hwaseong-si, KR;

Tae-Young Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Ajay Arora

Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/12 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/1222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

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