The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Aug. 16, 2019
Applicant:

Cisco Technology, Inc., San Jose, CA (US);

Inventors:

Sandeep Razdan, Burlingame, CA (US);

Ashley J. Maker, Pleasanton, CA (US);

Matthew J. Traverso, Santa Clara, CA (US);

Mark A. Webster, Bethlehem, PA (US);

Jock T. Bovington, La Mesa, CA (US);

Assignee:

Cisco Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/13 (2006.01); G02B 6/42 (2006.01); G02B 6/30 (2006.01); G02B 6/43 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/1225 (2013.01); G02B 6/13 (2013.01); G02B 6/30 (2013.01); G02B 6/428 (2013.01); G02B 6/4248 (2013.01); G02B 6/43 (2013.01); H01L 23/5384 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/73 (2013.01);
Abstract

Aspects described herein include a method comprising forming an insulator layer above a silicon layer of a silicon-on-insulator (SOI) substrate. A first optical device is formed partly in the silicon layer and partly in the insulator layer. A first optical waveguide is formed in the insulator layer and optically coupled with the first optical device. The method further comprises forming conductive contacts extending partly through the insulator layer to the first optical device, bonding a first surface of an interposer with a top surface of the insulator layer, and forming, from a second surface of the interposer opposite the first surface, a plurality of first conductive vias extending at least partly through the interposer. The plurality of first conductive vias are coupled with the conductive contacts.


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