The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Feb. 26, 2018
Applicant:

Toshiba Electron Tubes & Devices Co., Ltd., Otawara-shi, JP;

Inventor:

Hiroshi Onihashi, Nasushiobara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); G01T 1/20 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); G21K 4/00 (2006.01);
U.S. Cl.
CPC ...
G01T 1/247 (2013.01); G01T 1/2018 (2013.01); H01L 27/14603 (2013.01); H01L 27/14676 (2013.01); H01L 31/02322 (2013.01); G21K 4/00 (2013.01);
Abstract

A radiation detector includes a substrate, control lines provided on the substrate and extending in a first direction, data lines provided on the substrate and extending in a second direction crossing the first direction, and detection parts arranged in a matrix. Each detection part includes a thin film transistor and a conversion part converting radiation or light into electricity. Further, a control circuit switches an on state and an off state of each thin film transistor and a signal detection circuit reads out image data in the on state of the thin film transistor. Further, the detector judges a start time of radiation incidence based on a value of the image data read out in the on state of each thin film transistor.


Find Patent Forward Citations

Loading…