The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Oct. 16, 2017
Applicant:

Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;

Inventor:

Atsushi Igarashi, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 17/02 (2006.01); G05F 1/625 (2006.01); G01R 31/42 (2006.01); G01R 31/40 (2020.01);
U.S. Cl.
CPC ...
G01R 31/02 (2013.01); G01R 17/02 (2013.01); G01R 31/40 (2013.01); G01R 31/42 (2013.01); G05F 1/625 (2013.01);
Abstract

In order to provide a voltage abnormality detection circuit and a semiconductor device which are capable of detecting a voltage abnormality in an internal power supply voltage of the semiconductor device with a simple circuit configuration, the voltage abnormality detection circuit includes: a reference voltage circuit configured to output a first reference voltage, which is higher than the internal power supply voltage, and a second reference voltage, which is lower than the internal power supply voltage; a first voltage detection circuit configured to detect that the internal power supply voltage has exceeded a desired voltage value, with the use of the first reference voltage; and a second voltage detection circuit configured to detect that the internal power supply voltage has dropped lower than the desired voltage value, with the use of the second reference voltage.


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