The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Oct. 15, 2014
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C25F 3/02 (2006.01); C25F 3/12 (2006.01);
U.S. Cl.
CPC ...
C25F 3/12 (2013.01); C25F 3/02 (2013.01);
Abstract
A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (), the active layer () forming a front face of a stack, the stack comprising a back face () of conducting material and an insulating layer () interposed between the active layer () and the back face (), said process comprising the steps of: