The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Nov. 05, 2018
Applicant:

Ferro Corporation, Mayfield Heights, OH (US);

Inventors:

Cody J. Gleason, Solon, OH (US);

John J. Maloney, Solon, OH (US);

Srinivasan Sridharan, Strongsville, OH (US);

George E. Sakoske, Independence, OH (US);

Peter Marley, Farmington, NY (US);

Mohammed H. Megherhi, Victor, NY (US);

Yie-Shein Her, Canandaiuga, NY (US);

Orville W. Brown, Escondido, CA (US);

Jackie D. Davis, Cleveland, OH (US);

Thomas J. Coffey, Cleveland Heights, OH (US);

Ellen S. Tormey, Princeton Junction, NJ (US);

Stanley Wang, Taipei, TW;

David L. Widlewski, Parma Heights, OH (US);

Assignee:

Ferro Corporation, Mayfield Heights, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 14/00 (2006.01); C03C 4/16 (2006.01); C03C 10/00 (2006.01); C03C 3/118 (2006.01); C04B 35/14 (2006.01); H01L 23/15 (2006.01); C03B 19/00 (2006.01); C03C 12/00 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
C03C 10/0027 (2013.01); C03B 19/00 (2013.01); C03C 3/118 (2013.01); C03C 4/16 (2013.01); C03C 12/00 (2013.01); C03C 14/004 (2013.01); C04B 35/14 (2013.01); H01L 23/15 (2013.01); C03C 2214/04 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3234 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3409 (2013.01); C04B 2235/3436 (2013.01); C04B 2235/3472 (2013.01); C04B 2235/3481 (2013.01); C04B 2235/36 (2013.01); C04B 2235/365 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/445 (2013.01); C04B 2235/447 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/77 (2013.01); C04B 2235/80 (2013.01); C04B 2235/9607 (2013.01); H05K 1/0306 (2013.01);
Abstract

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO, 5-35 mole % or 0.1-35 mole % BO, 0.1-10 mole % or 0.1-25 mole % AlO, 0.1-10 mole % KO, 0.1-10 mole % NaO, 0.1-20 mole % LiO, 0.1-30 mole % F. The total amount of LiO+NaO+KO is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.


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