The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Apr. 29, 2016
Winnoz Technology, Inc., Taipei, TW;
Le-Chang Hsiung, Taipei, TW;
Chun-Yen Tai, Taipei, TW;
Yu-Lin Chen, Taipei, TW;
Fang-Yu Lin, Taipei, TW;
Chuan Whatt Eric Ou, Singapore, SG;
Winnoz Technology, Inc., Taipei, TW;
Abstract
An electrochemical extended-gate transistor (EET) system is provided, the system includes: a field effect transistor (FET), having a gate, a source, and a drain; a potentiostat, having a working electrode, a counter electrode, and a reference electrode; wherein the working electrode is coupled with a detection region, and the counter electrode is coupled with the gate; wherein the detection region, the gate, and the reference electrode are arranged in an ion fluid; wherein the potentiostat is configured to generate redox in the ion fluid by an electrochemical method to detect the target. A method for detecting targets are used to such system.