The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
May. 19, 2017
The Regents of the University of California, Oakland, CA (US);
Michael J. Ford, Santa Barbara, CA (US);
Hengbin Wang, Santa Barbara, CA (US);
Guillermo C. Bazan, Santa Barbara, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (I/I) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.