The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Aug. 16, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Il Mok Park, Seoul, KR;

Tae Jin Park, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1293 (2013.01); H01L 27/249 (2013.01); H01L 27/2427 (2013.01); H01L 45/065 (2013.01); H01L 45/124 (2013.01); H01L 45/126 (2013.01); H01L 45/141 (2013.01); H01L 45/1683 (2013.01);
Abstract

A semiconductor device includes a first word line and a first bit line. The semiconductor device further includes a mold film disposed between the first word line and the first bit line, and a first memory cell disposed in the mold film. The first memory cell includes a first lower electrode in contact with the first word line. Side surfaces of the first lower electrode are in direct contact with the mold film. The first memory cell includes a first phase-change memory in contact with the first lower electrode, a first intermediate electrode in contact with the first phase-change memory, a first ovonic threshold switch (OTS) in contact with the first intermediate electrode, and a first upper electrode disposed between the first OTS and the first bit line, the first upper electrode in contact with the first OTS and the first bit line.


Find Patent Forward Citations

Park, Il. (2020). Semiconductor device and method for fabricating the same (U.S. Patent No. 10559752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10559752

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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