The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Oct. 06, 2016
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

John David Baniecki, Zama, JP;

Hiroyuki Aso, Atsugi, JP;

Yoshihiko Imanaka, Atsugi, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/22 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01);
U.S. Cl.
CPC ...
H01L 35/22 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01);
Abstract

A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.


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