The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Oct. 26, 2018
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Motors Corporation, Seoul, KR;

Inventor:

Dae Hwan Chun, Gyeonggi-do, KR;

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/0615 (2013.01); H01L 29/0843 (2013.01); H01L 29/1058 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/66909 (2013.01); H01L 29/36 (2013.01); H01L 29/66893 (2013.01);
Abstract

A semiconductor device is provide. The device includes a first n− type of layer, a second n− type of layer, and an n+ type of region sequentially disposed on a first surface of a substrate. A trench is disposed on a side surface of the second n− type of layer, a p type of region is disposed between the second n− type of layer and the trench, and a gate electrode is disposed on a bottom surface of the trench. A source electrode is disposed on the n+ type of region and a drain electrode is disposed on a second surface of the substrate. The second n− type of layer includes a first concentration layer, a second concentration layer, a third concentration layer, and a fourth concentration layer sequentially disposed on the first n− type of layer.


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