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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10559700 B1

PDFFull Text
Date of Patent:
Feb. 11, 2020

Filed:

Mar. 02, 2016

Zero cost nvm cell using high voltage devices in analog process

Applicant:

Jonker Llc, Zephyr Cove, NV (US);

Inventor:

David Liu, Fremont, CA (US);

Assignee:

JONKER LLC, Zephyr Cove, NV (US);

Attorney:

J. Nicholas Gross

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 27/11541 (2017.01); H01L 27/11558 (2017.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 27/11521 (2017.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7885 (2013.01); H01L 27/11521 (2013.01); H01L 27/11541 (2013.01); H01L 27/11558 (2013.01); H01L 29/1095 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7816 (2013.01); H01L 29/7883 (2013.01);
Abstract

A non-volatile memory cell and array structure is disclosed situated within a high voltage region of an integrated circuit. The cell utilizes capacitive coupling based on an overlap between a gate and a drift region to impart a programming voltage. Programming is effectuated using a drain extension which can act to inject hot electrons. The cell can be operated as a one-time programmable (OTP) or multiple-time programmable (MTP) device. The fabrication of the cell relies on processing steps associated with high voltage devices, thus avoiding the need for additional masks, manufacturing steps, etc.

Find Patent Forward Citations

Liu, David. (2020). Zero cost nvm cell using high voltage devices in analog process (U.S. Patent No. 10559700). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10559700

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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