The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Aug. 17, 2018
Applicant:
Coorstek Kk, Shinagawa-ku, Tokyo, JP;
Inventors:
Assignee:
COORSTEK KK, Shinagawa-Ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/0684 (2013.01); H01L 29/205 (2013.01); H01L 29/2003 (2013.01);
Abstract
There is provided a nitride semiconductor epitaxial substrate having a channel layer, a spacer layer, and an electron supply layer that are stacked in this order. The channel layer is GaN. The spacer layer is AlGaN (0<a<0.5). The electron supply layer is AllnGaN (0<x+y≤1). The spacer layer has a thickness of two molecular layers or less.