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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10559617 B1

PDFFull Text
Date of Patent:
Feb. 11, 2020

Filed:

Feb. 28, 2019

Light emitting device with reflective sidewall

Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Dawei Lu, Campbell, CA (US);

Oleg Shchekin, San Francisco, CA (US);

Assignee:

LUMILEDS LLC, San Jose, CA (US);

Attorney:
Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H01L 27/146 (2006.01); F21V 7/00 (2006.01); F21V 7/04 (2006.01); F21V 7/22 (2018.01); H05B 33/22 (2006.01); H01L 33/46 (2010.01); H01L 33/58 (2010.01); F21Y 115/10 (2016.01); C03C 3/12 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); F21V 7/0025 (2013.01); F21V 7/04 (2013.01); F21V 7/22 (2013.01); H01L 33/46 (2013.01); H01L 33/58 (2013.01); H05B 33/22 (2013.01); C03C 3/127 (2013.01); F21Y 2115/10 (2016.08); H01L 33/50 (2013.01); H01L 33/56 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

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