The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Aug. 02, 2018
Canon Kabushiki Kaisha, Tokyo, JP;
Yoichiro Handa, Tokyo, JP;
Ginjiro Toyoguchi, Tokyo, JP;
Junji Iwata, Tokyo, JP;
Yoichi Wada, Yokohama, JP;
Hideyuki Ito, Kawasaki, JP;
Hiromasa Tsuboi, Tama, JP;
Daichi Seto, Yokohama, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.