The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
May. 07, 2018
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventors:
In Su Park, Icheon-si, KR;
Dong Sun Sheen, Seongnam-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); H01L 27/11582 (2017.01); H01L 29/10 (2006.01); G11C 16/04 (2006.01); H01L 23/522 (2006.01); H01L 29/08 (2006.01); H01L 21/28 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); H01L 23/5226 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); G11C 16/0466 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3445 (2013.01); G11C 16/3459 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31111 (2013.01); H01L 29/40117 (2019.08);
Abstract
Provided herein may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a memory string including memory cells coupled to each other in series via a channel layer, the memory string coupled between a bit line and a second source line. The semiconductor device may include a first source line electrically coupled to the second source line through the channel layer.