The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Feb. 07, 2017
Eun Yeoung Choi, Hwaseong-si, KR;
Bio Kim, Seoul, KR;
Young Wan Kim, Hwaseong-si, KR;
Jung Ho Kim, Seongnam-si, KR;
Young Seon Son, Hwaseong-si, KR;
Jae Young Ahn, Seongnam-si, KR;
Byong Hyun Jang, Suwon-si, KR;
Eun Yeoung Choi, Hwaseong-si, KR;
Bio Kim, Seoul, KR;
Young Wan Kim, Hwaseong-si, KR;
Jung Ho Kim, Seongnam-si, KR;
Young Seon Son, Hwaseong-si, KR;
Jae Young Ahn, Seongnam-si, KR;
Byong Hyun Jang, Suwon-si, KR;
Abstract
A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.