The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Nov. 26, 2018
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0214 (2013.01); C23C 16/308 (2013.01); C23C 16/45538 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02172 (2013.01); H01L 21/02247 (2013.01); H01L 21/02274 (2013.01); H01L 21/02332 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01);
Abstract
A method of forming a nitrogen-incorporated silicon or metal oxide film, includes (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.