The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Nov. 29, 2018
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Akimasa Kaizu, Tokyo, JP;

Naomichi Degawa, Tokyo, JP;

Tetsuya Roppongi, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01L 43/02 (2006.01); H03H 11/04 (2006.01); H03B 15/00 (2006.01); H03H 11/16 (2006.01); H03F 15/00 (2006.01); H01L 27/22 (2006.01); H03H 2/00 (2006.01); G01R 33/09 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3259 (2013.01); H01F 10/324 (2013.01); H01F 10/329 (2013.01); H01L 27/22 (2013.01); H01L 43/02 (2013.01); H03B 15/006 (2013.01); H03F 15/00 (2013.01); H03H 2/00 (2013.01); H03H 11/04 (2013.01); H03H 11/16 (2013.01); G01R 33/093 (2013.01); H01L 43/10 (2013.01);
Abstract

At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.


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