The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Nov. 30, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Sualp Aras, Dallas, TX (US);

Eung Jung Kim, Allen, TX (US);

Abidur Md Rahman, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); G01R 31/00 (2006.01); G01R 19/165 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); G01R 19/16552 (2013.01); G01R 31/002 (2013.01);
Abstract

In some examples, the disclosure includes a circuit including a power field effect transistor (FET), a gate pull-down circuit, a pull-down bias circuit, and a radio frequency (RF) detector coupled to the source terminal of the power FET and the pull-down bias circuit. In an example, the RF detector circuit is configured to detect a presence of an alternating current signal at a source terminal of the power FET when the power FET is in a non-conductive state and control the pull-down bias circuit to bias the gate pull-down circuit to create a low impedance path between a gate terminal of the power FET and the source terminal of the power FET when the power FET is in the non-conductive state and the alternating current signal is present at the source terminal of the power FET.


Find Patent Forward Citations

Loading…