The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Sep. 29, 2016
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Frank Singer, Regenstauf, DE;
Norwin Von Malm, Nittendorf, DE;
Tilman Ruegheimer, Regensburg, DE;
Thomas Kippes, Neumarkt, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). The n-contact () extends from the p-type region () through the active zone () and into the n-type region () and is located, when viewed from above, next to the resonator path ().