The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Mar. 23, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Yukihiro Tsuji, Tama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0042 (2013.01); H01S 5/183 (2013.01); H01S 5/4068 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01);
Abstract

A method of producing a semiconductor laser device includes the steps of preparing first and second substrate products each of which includes a substrate and a stacked semiconductor layer formed on the substrate, the first and second substrate products being different from each other; etching the first substrate product with a chlorine-based gas in a vacuum chamber by using a dry etching method; evacuating the vacuum chamber while monitoring the pressure of hydrogen chloride in the vacuum chamber so as to obtain a partial pressure of the hydrogen chloride within a predetermined range; after evacuating the vacuum chamber, introducing the second substrate product into the vacuum chamber while maintaining a vacuum state inside the vacuum chamber; and etching the second substrate product with a chlorine-based gas in the vacuum chamber by using the dry etching method.


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