The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Feb. 28, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Yoshiaki Asao, Kawasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0009 (2013.01); G11C 13/0033 (2013.01); H01L 27/2427 (2013.01); H01L 45/126 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); G11C 2213/76 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01);
Abstract

According to one embodiment, a semiconductor includes a first wiring, a second wiring, a first electrode, a second electrode and a memory cell. The first wiring extends in a first direction. The second wiring extends in a second direction crossing the first direction. The first electrode is connected to the first wiring. The second electrode is connected to the second wiring. The memory cell is arranged between the first electrode and the second electrode. The memory cell includes a memory element electrically connected to the first electrode, and a selector provided between the memory element and the second electrode and electrically connected to the second electrode, and the memory element and the selector are of a same conductivity type.


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