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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10553767 B1

PDFFull Text
Date of Patent:
Feb. 04, 2020

Filed:

Jan. 08, 2018

Light emitting diodes with integrated reflector for a direct view display and method of making thereof

Applicant:

Glo Ab, Lund, SE;

Inventors:

Fariba Danesh, Pleasanton, CA (US);

Nathan F. Gardner, Sunnyvale, CA (US);

Jonathan J. Wierer, Jr., Coopersburg, PA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:

The Marbury Law Group, PLLC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 25/0753 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2224/2957 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29639 (2013.01); H01L 2224/29644 (2013.01); H01L 2224/29647 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.

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