Light emitting diode chip with protective layer of metal catalyst and fluorinated graphene and preparation method thereof

Abstract

A method for preparing a light emitting diode chip, the method including: 1) providing a substrate; 2) growing an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the substrate sequentially in that order; 3) forming a step including an upper horizontal end surface, a lower horizontal end surface and a step surface in the n-type semiconductor layer, the active layer and the p-type semiconductor layer; 4) growing a transparent conductive layer on the upper horizontal end surface, and forming an etching hole in the middle of the transparent conductive layer; 5) forming an N electrode on the lower horizontal end surface, and forming a P electrode in the etching hole; 6) growing a metal catalyst layer on the light emitting diode chip; and 7) forming a fluorinated graphene protective layer on the metal catalyst layer.