The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Jul. 13, 2018
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Aurelien Gauthier-Brun, Hsinchu, TW;

Chao-Hsing Chen, Hsinchu, TW;

Chang-Tai Hsaio, Hsinchu, TW;

Chih-Hao Chen, Hsinchu, TW;

Chi-Shiang Hsu, Hsinchu, TW;

Jia-Kuen Wang, Hsinchu, TW;

Yung-Hsiang Lin, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01);
Abstract

A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.


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