The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
May. 15, 2019
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Abstract
The subject matter of the invention is a method for producing a lateral photodiode comprising a layer surmounted by a first pattern comprising an absorption region interposed between two contact regions. After encapsulation of the first pattern, a cavity is formed between the contact regions by etching through openings, and then filled with a material constituting the absorption region by lateral epitaxy of this material from the lateral walls of the cavity. According to one possibility, a first lateral epitaxy is effected in order to form a multiplication region, and then a second lateral epitaxy is effected in order to form a charge region before the lateral epitaxy of the material constituting the absorption region, so as to obtain a lateral avalanche photodiode having improved optical confinement. The lateral photodiode according to the invention has improved optical confinement.