The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Dec. 29, 2017
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

JongUk Bae, Seoul, KR;

YongHo Jang, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/3248 (2013.01); H01L 27/3276 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01);
Abstract

Disclosed are a thin film transistor, a method of manufacturing the same, and an organic light emitting display device including the same, in which a driving stability of a driving transistor is enhanced even without connecting a source electrode to a bottom gate electrode of the driving transistor. The film transistor includes a N-type semiconductor layer, a P-type semiconductor layer on the N-type semiconductor layer, a first gate electrode on the P-type semiconductor layer, a gate insulation layer between the first gate electrode and the P-type semiconductor layer, a first source electrode connected to a first side of the P-type semiconductor layer, and a first drain electrode connected to a second side of the P-type semiconductor layer.


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