The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Aug. 10, 2018
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Chung Ang University Industry Academic Cooperation Foundation, Seoul, KR;
Tae Young Kim, Yongin-si, KR;
Jong Woo Park, Yongin-si, KR;
Hyuck-In Kwon, Seoul, KR;
Dae-Hwan Kim, Seoul, KR;
Hee-Joong Kim, Seoul, KR;
Sae-Young Hong, Seoul, KR;
Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;
Chung Ang University Industry Academic Cooperation Foundation, Seoul, KR;
Abstract
A vertical stack transistor includes: a first transistor and a second transistor, located in a vertical direction, wherein the first transistor includes a first gate electrode, a first insulating layer, a first electrode, a first channel, and a second electrode, which are sequentially stacked in the vertical direction, and the second transistor includes a second gate electrode, a second insulating layer, a third electrode, a second channel, and a fourth electrode, which are sequentially stacked in the vertical direction, wherein the second gate electrode and the second electrode are the same electrode.