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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10553644 B1

PDFFull Text
Date of Patent:
Feb. 04, 2020

Filed:

Jun. 22, 2018

Test circuit block, variable resistance memory device including the same, and method of forming the variable resistance memory device

Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Seok Joon Kang, Seoul, KR;

Ho Seok Em, Hwaseong, KR;

Assignee:

Sk hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:

William Park & Associates Ltd.

Primary Examiner:

James G Norman

Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 29/12 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 21/66 (2006.01); G11C 29/02 (2006.01); G11C 29/24 (2006.01); G11C 29/04 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 29/026 (2013.01); G11C 29/12005 (2013.01); G11C 29/24 (2013.01); H01L 22/20 (2013.01); H01L 45/06 (2013.01); H01L 45/16 (2013.01); G11C 5/025 (2013.01); G11C 2029/0403 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01); G11C 2029/1206 (2013.01); G11C 2213/15 (2013.01); H01L 27/2427 (2013.01);
Abstract

A test circuit block may include a first signal line, a second signal line, a high resistive path unit, and a low resistive path unit. The high resistive path unit may be connected between the first signal line and the second signal line. The low resistive path unit may have a resistance lower than that of the high resistive path unit. The low resistive path unit may be selectively connected in parallel with the high resistive path unit between the first signal line and the second signal line.

Find Patent Forward Citations

Quick Actions:

Kang, Seok. (2020). Test circuit block, variable resistance memory device including the same, and method of forming the variable resistance memory device (U.S. Patent No. 10553644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10553644

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