The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Oct. 02, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Woong Seop Lee, Hwaseong-si, KR;

Byung Kwan You, Seoul, KR;

Jae Woo Kwak, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 27/11565 (2017.01); H01L 21/3213 (2006.01); H01L 27/11526 (2017.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 21/31105 (2013.01); H01L 21/3213 (2013.01); H01L 27/11526 (2013.01); H01L 27/11573 (2013.01);
Abstract

A semiconductor device includes a substrate, a first gate structure including first gate electrodes that are vertically stacked on the substrate, first channels penetrating the first gate structure to contact the substrate, a second gate structure including a channel connection layer on the first gate structure and second gate electrodes on the channel connection layer, second channels penetrating the second gate structure to contact the first channels, respectively, and separation regions penetrating the second gate structure and the first gate structure and extending in a first direction. The second gate electrodes are vertically stacked on the channel connection layer. The channel connection layer is between the separation regions and has at least one sidewall that is spaced apart from sidewalls of the separation regions.


Find Patent Forward Citations

Loading…