The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Mar. 23, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Ji Mo Gu, Seoul, KR;
Kyeong Jin Park, Seoul, KR;
Hyun Mog Park, Seoul, KR;
Byoung Il Lee, Seoul, KR;
Tak Lee, Hwaseong-si, KR;
Jun Ho Cha, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.