The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Mar. 02, 2015
Applicants:
Kurt A. Schroder, Coupland, TX (US);
Robert P. Wenz, Austin, TX (US);
Inventors:
Kurt A. Schroder, Coupland, TX (US);
Robert P. Wenz, Austin, TX (US);
Assignee:
NCC NANO, LLC, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/428 (2006.01); B29C 35/02 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); B29C 35/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/428 (2013.01); B29C 35/0266 (2013.01); B29C 35/0272 (2013.01); H01L 21/02422 (2013.01); H01L 21/02439 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/02686 (2013.01); H01L 21/02689 (2013.01); H01L 27/1281 (2013.01); H01L 29/66742 (2013.01); H01L 29/66757 (2013.01); B29C 35/0805 (2013.01); B29C 2035/0855 (2013.01); B29C 2035/0877 (2013.01);
Abstract
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.